Stress-related hydrogen degradation of 0.1 μm InP HEMTs and GaAs PHEMTs

Author

Blanchard, R.R. ; del Alamo, J.A.

Author_Institution

Analog Devices Inc., Wilmington, MA, USA

fYear

2000

fDate

2000

Firstpage

79

Lastpage

82

Abstract

Hydrogen degradation of III-V FETs is a serious reliability concern. Previous work has shown that threshold voltage shifts induced by H₂ exposure in 1 μm-channel InP HEMTs can be attributed to compressive stress in the gate due to the formation of TiH_x in Ti/Pt/Au gates. The compressive stress affects the device characteristics through the piezoelectric effect. The present work examined the H₂ sensitivity of 0.1 μm strained-channel InP HEMTs and GaAs PHEMTs. After exposure to H₂, the threshold voltage, V_T, of both types of devices shifted positive. In situ V_T measurements reveal that the V _T shifts show very distinctive time dependencies that are consistent with stress-related phenomena

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0.1 micron; GaAs; GaAs PHEMT; H₂; III-V FET; InP; InP HEMT; Ti/Pt/Au gate; compressive stress; hydrogen degradation; piezoelectric effect; threshold voltage; Compressive stress; Degradation; FETs; Gallium arsenide; HEMTs; Hydrogen; III-V semiconductor materials; Indium phosphide; MODFETs; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850235

Filename

850235