• DocumentCode
    2123013
  • Title

    Application of self-assembled InAs nanodots for a HEMT-type memory-effect transistor

  • Author

    Koike, K. ; Li, S. ; Saitoh, K. ; Sasa, S. ; Inoue, M. ; Yano, M.

  • Author_Institution
    New Mater. Res. Center, Osaka Inst. of Technol., Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    106
  • Lastpage
    109
  • Abstract
    This letter describes an application of InAs nanodots embedded in an Al0.5Ga0.5As for a memory-effect field-effect transistor. The device experiences a shift of threshold gate voltage as a function of the amount of electrons in the nanodots. Although this shift volatilizes with the time after memory programming operation, a considerable part of the shift is retained more than 100 h even at room temperature
  • Keywords
    III-V semiconductors; high electron mobility transistors; indium compounds; self-assembly; semiconductor quantum dots; semiconductor storage; Al0.5Ga0.5As; Al0.5Ga0.5As barrier layer; HEMT; InAs; InAs self-assembled nanodots; memory effect field effect transistor; threshold voltage; Electrodes; Electrons; Excitons; FETs; Gallium arsenide; HEMTs; Nanoscale devices; Self-assembly; Temperature dependence; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850243
  • Filename
    850243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123013