DocumentCode
2123314
Title
Interdiffusion effects at long-range ordered Ga0.5In0.5P and GaAs heterointerfaces
Author
Yamashita, K. ; Kita, T. ; Nishino, T. ; Wang, Y. ; Murase, K. ; Geng, C. ; Scholz, E. ; Schweizer, H.
Author_Institution
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear
2000
fDate
2000
Firstpage
154
Lastpage
157
Abstract
We measured photoluminescence and Raman-scattering spectra of a long-range ordered Ga0.5In0.5P/GaAs heterointerface. With increasing order parameter, the GaAs-PL spectrum is gradually changed from that of the bulk GaAs to an anomalous spectrum with two broad peaks. In the PL-excitation measurements, we found that these broad peaks are related to localized states in GaAs and Ga0.5 In0.5P layers. On the other hand, in the Raman-scattering measurements, the Ga-As LO-phonon mode shows a red shift in contrast to that of the bulk GaAs, and the Ga-As TO mode appears in spite of a forbidden transition. These results suggest interdiffusion of P atoms, which induces non-crystallization of the GaAs. We consider that GaAsP alloys are constituted at the ordered Ga 0.5In0.5P/GaAs heterointerface
Keywords
III-V semiconductors; Raman spectra; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; phonons; photoluminescence; red shift; semiconductor heterojunctions; Ga0.5In0.5P-GaAs; LO-phonon mode; Raman-scattering; TO-phonon mode; interdiffusion; localized states; long-range ordered heterointerfaces; photoluminescence; red shift; Capacitance measurement; Current measurement; Epitaxial growth; Gallium arsenide; Laser excitation; Optical devices; Optical superlattices; Photoluminescence; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850255
Filename
850255
Link To Document