DocumentCode
2123410
Title
Epitaxial growth by low pressure chemical vapour deposition of Si 1-xGex/Si and applications
Author
Vescan, L. ; Goryll, M. ; Grimm, K. ; Wickenhauser, S. ; Stoica, T.
Author_Institution
Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany
Volume
2
fYear
1997
fDate
7-11 Oct 1997
Firstpage
405
Abstract
Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented
Keywords
Ge-Si alloys; elemental semiconductors; light emitting diodes; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon; vapour phase epitaxial growth; Si1-xGex/Si; SiGe-Si; critical thickness; epitaxial growth; facet formation; lateral confinement; light emitting diodes; low pressure chemical vapour deposition; microelectronics; nanostructures; optoelectronics; room temperature operation; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Hydrogen; Inductors; Microelectronics; Nanostructures; Silicon germanium; Temperature; Water pollution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651223
Filename
651223
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