Pt/MoO3 nano-flower/SiC Schottky diode based hydrogen gas sensor

Author

Shafiei, M. ; Yu, J. ; Breedon, M. ; Moafi, A. ; Kalantar-Zadeh, K. ; Wlodarski, W. ; Kaner, R.B. ; Galatsis, K.

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia

fYear

2010

fDate

1-4 Nov. 2010

Firstpage

354

Lastpage

357

Abstract

In this paper, we report the development of a novel Pt/MoO₃ nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO₃ nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO₃ by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation of nano-flowers with dimensions ranging from 250 nm to 1 μm. Current-voltage characteristics of the sensor were measured at temperatures from 25°C to 250°C. The sensor showed greater sensitivity in a reverse bias condition than in forward bias. Dynamic response of the sensor was investigated towards different concentrations of hydrogen gas in a synthetic air mixture at 250°C and a large voltage shift of 5.7 V was recorded upon exposure to 1% hydrogen.

Keywords

Schottky diodes; dynamic response; gas sensors; hydrogen; molybdenum compounds; platinum compounds; scanning electron microscopy; silicon compounds; Pt:MoO₃; Schottky diode; SiC; current voltage characteristic; dynamic response; hydrogen gas sensor; nanoflower; nanostructured thin film; scanning electron microscopy; size 250 nm to 1 nm; temperature 25 degC to 250 degC; thermal evaporation; voltage 5.7 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2010 IEEE

Conference_Location

Kona, HI

ISSN

1930-0395

Print_ISBN

978-1-4244-8170-5

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2010.5690245

Filename

5690245