Doping properties of Pr2O3 associate InGaAs liquid phase epitaxial growths

InGaAs epilayers were grown on semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with Pr₂O₃ doped into the growth melt during the epitaxial process. Most layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of the InGaAs layers decreases from a value of 1.6×10¹⁶ to 2.0×10₁₅ cm^-3. The corresponding 77 K mobility also significantly increases from a value of 15321 to 32171 cm²/V-s. The photoluminescence spectra of Pr₂O₃ doped InGaAs epilayers display strong intensity ratios for the band peak to the impurity peak, which also demonstrates that the grown layers exhibit a pure crystal property