An improved performance 62.7 GHz low power divide-by-16 InP-based HBT circuit

Author

Elliott, K.R. ; Thomas, S. ; Brown, J. ; Kramer, A. ; Sokolich, M. ; Lui, M. ; Hitko, D.

Author_Institution

HRL Lab., Malibu, CA, USA

fYear

2000

fDate

2000

Firstpage

243

Lastpage

245

Abstract

We report improved static divider performance of 62.7 GHz maximum toggle frequency at power levels of 60 mW/flip-flop using a highly manufacturable AlInAs/GaInAs single heterojunction HBT on semi-insulating InP substrates. This improvement was made by reduction in collector-base capacitance and has been achieved with no apparent reduction in yield

Keywords

III-V semiconductors; aluminium compounds; bipolar MIMIC; capacitance; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 60 mW; 62.7 GHz; AlInAs-GaInAs; AlInAs/GaInAs single heterojunction HBT; InP; collector-base capacitance; flip-flop; low power divide-by-16 InP-based HBT circuit; maximum toggle frequency; power levels; semi-insulating InP substrates; static divider performance; yield; Capacitance; Circuit simulation; Clocks; Fabrication; Flip-flops; Frequency conversion; Frequency synthesizers; Heterojunction bipolar transistors; Indium phosphide; Sampling methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850277

Filename

850277