Experimental investigation of noise sources in silicon carbide Schottky barriers

Author

Anghel, L. ; Ouisse, T. ; Billon, T. ; Lassagne, F. ; Jaussaud, C.

Author_Institution

Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France

Volume

2

fYear

1996

fDate

9-12 Oct 1996

Firstpage

539

Abstract

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general properties of these devices such as barrier height and doping level, extracted from varying temperature measurements. The 1/f low frequency noise closely follows a model proposed by Kleinpenning (1979) and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier

Keywords

1/f noise; Schottky barriers; Schottky diodes; carrier mobility; fluctuations; power semiconductor diodes; semiconductor device models; semiconductor device noise; silicon compounds; wide band gap semiconductors; 1/f LF noise; Schottky barriers; Schottky diodes; Ti gate; Ti-SiC; barrier height; depletion region; doping level; excess LF noise; low frequency noise; mobility fluctuations; model; n-type SiC devices; noise sources; Acoustical engineering; Doping; Frequency measurement; Low-frequency noise; Noise level; Noise measurement; Schottky diodes; Semiconductor process modeling; Silicon carbide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557436

Filename

557436