MOVPE growth of strained 1300 nm InGaAlAsP/InGaAsP quantum well structures

Author

Campi, Roberta ; Pate, Amit ; Landgren, Gunnar

Author_Institution

Lab. of Semicond. Mater., R. Inst. of Technol., Kista, Sweden

fYear

2000

fDate

2000

Firstpage

380

Lastpage

383

Abstract

In this work we propose novel 1.3 μm InGaAlAsP/InGaAsP MQW laser structures designed for high-temperature operation. The effects of aluminium on the band offsets and carrier confinement in MQW structures have been investigated. Epitaxial structures exhibited very high photoluminescence (PL) and sharp satellites in high-resolution X-ray diffraction. The carrier transport issues were further investigated using femtosecond time-resolved PL. Broad area lasers exhibited values of threshold current density of 261 A/cm² per quantum well and a slope efficiency of 0.25 W/A. The observed T₀ values of 69 K for pure InGaAsP barriers increased to about 95 K for an Al content of about 12.5%, in accordance with expectations

Keywords

III-V semiconductors; MOCVD; aluminium compounds; band structure; current density; gallium arsenide; gallium compounds; indium compounds; interface states; photoluminescence; quantum well lasers; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; 1300 nm; 69 K; InGaAlAsP-InGaAsP; InGaAlAsP/InGaAsP MQW laser structures; MOVPE growth; aluminium; band offsets; broad area lasers; carrier confinement; carrier transport; epitaxial structures; femtosecond time-resolved PL; high-resolution X-ray diffraction; high-temperature operation; photoluminescence; sharp satellites; slope efficiency; strained InGaAlAsP/InGaAsP quantum well structures; threshold current density; Aluminum; Carrier confinement; Epitaxial growth; Epitaxial layers; Optical design; Photoluminescence; Quantum well devices; Quantum well lasers; Satellites; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850312

Filename

850312