• DocumentCode
    2125407
  • Title

    Distributed approach for modeling integrated MESFET/HFET devices

  • Author

    Stiebler, W. ; Matthes, M. ; Koppel, T. ; Bock, G.

  • Author_Institution
    Technical University of Berlin, Department of Electrical Engineering, Microwave Engineering Group, Einsteinufer 25; 10587 Berlin, Germany; Fax: +49/30/314-24626
  • Volume
    1
  • fYear
    1996
  • fDate
    6-13 Sept. 1996
  • Firstpage
    24
  • Lastpage
    28
  • Abstract
    To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the "Cold-FET" and a new element for the frequency dependence of the gate-resistance due to the skin effect.
  • Keywords
    Capacitance; Distributed parameter circuits; Equivalent circuits; Frequency dependence; HEMTs; MODFETs; Propagation losses; Transmission line matrix methods; Transmission lines; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1996. 26th European
  • Conference_Location
    Prague, Czech Republic
  • Type

    conf

  • DOI
    10.1109/EUMA.1996.337635
  • Filename
    4138565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125407