Diagnosis of carbon content defects during nitride layer growth for nano-generation technology

Author

Po-Ying Chen ; Wen-Kuan Yeh ; Keng-Chang Tu

Author_Institution

Dept. of Inf. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2013

fDate

25-26 Feb. 2013

Firstpage

386

Lastpage

388

Abstract

This investigation considers in detail a defect called “silicon substrate damaged defects” and also introduces these defects´ forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI´s situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.

Keywords

ULSI; elemental semiconductors; nanofabrication; silicon; Si; carbon content defect diagnosis; deep-submicrometer ULSI; defect forming mechanisms; electrical charges; manufacturing processes; nanogeneration technology; nitride layer growth; silicon substrate damaged defects; silicon wafer surface; Carbon; Educational institutions; Logic gates; Silicon; Substrates; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4673-3036-7

Type

conf

DOI

10.1109/ISNE.2013.6512374

Filename

6512374

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2126327