• DocumentCode
    2127088
  • Title

    A new CVD tungsten nitride diffusion barrier for Cu interconnection

  • Author

    Sun, S.C. ; Tsai, M.H. ; Chiu, H.T. ; Chuang, S.H.

  • Author_Institution
    Nat. Nano Device Lab., Hsinchu, Taiwan
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    This paper reports the investigation of a newly developed WNx film by metalorganic chemical vapor deposition (MOCVD). The WNx material provided an excellent diffusion barrier for Cu metallization.
  • Keywords
    CVD coatings; copper; diffusion barriers; metallisation; tungsten compounds; Cu; Cu interconnection; Cu metallization; WN; WNx film; metalorganic chemical vapor deposition; tungsten nitride diffusion barrier; Chemical vapor deposition; Inorganic materials; MOCVD; Metallization; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507788
  • Filename
    507788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2127088