• DocumentCode
    2127307
  • Title

    Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency

  • Author

    Hirayama, Hideki ; Maeda, Noritoshi ; Jo, Masafumi

  • Author_Institution
    RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    11
  • Lastpage
    12
  • Abstract
    We demonstrated significant improvement of light-extraction efficiency (LEE) of AlGaN ultraviolet (UV) C light-emitting diodes (LEDs) by using transparent p-AlGaN contact layer and highly-reflective p-type electrode.
  • Keywords
    Aluminum gallium nitride; Aluminum nitride; Electrodes; III-V semiconductor materials; Light emitting diodes; Nickel; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248168
  • Filename
    7248168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2127307