Microwave performance of GaInAs/AlInAs-HEMTs grown on optical waveguide layers for high-bit rate optical receivers

We report on the fabrication and characterization of AlInAs/GaInAs/InP high-electron mobility transistors (HEMTs) regrown by MBE on optical waveguide layers. A travelling wave amplifier (TWA), consisting of four HEMTs, is monolithically integrated with a pin photodiode and an optical waveguide to build a high-bit rate optical receiver on semi-insulating InP substrate. The 0.7 ¿m gate HEMTs showed fT and fmax of 37 GHz and 105 GHz, respectively, which are well comparable to the performances of the reference devices grown on InP:Fe substrate. The devices are designed to exhibit their maxima of Gm, fT and fmax at Vgs=0V.