Application of HSQ (hydrogen silsesquioxane) based SOG to pre-metal dielectric planarization in STC (stacked capacitor) DRAM

Author

Lee, H.J. ; Choi, J.H. ; Hwang, B.K. ; Goo, J.S. ; Fujihara, K. ; Chung, U.I. ; Kim, K.H. ; Lee, S.I. ; Lee, M.Y.

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea

fYear

1996

fDate

11-13 June 1996

Firstpage

112

Lastpage

113

Abstract

We investigated a new planarization process by employing a flowable HSQ (hydrogen silsesquioxane) based inorganic SOG (spin-on-glass) for pre-metal dielectric material, in order to develop a simple planarization process with low thermal budget and good planarity in STC (stacked capacitor) DRAM devices. We implemented this process in 256 Mb DRAM devices, and achieved lower TaO leakage current and better Al-reflow characteristics as well as better planarization performance than those of conventional BPSG process. Degradation of device characteristics such as Vth change or hot-carrier hardness were not observed.

Keywords

DRAM chips; hydrogen compounds; integrated circuit technology; surface treatment; 256 Mbit; Al reflow; HSO; TaO leakage current; hydrogen silsesquioxane; inorganic spin-on-glas; planarization; pre-metal dielectric material; stacked capacitor DRAM; thermal budget; Capacitors; Dielectric materials; Hot carriers; Hydrogen; Leakage current; Planarization; Random access memory; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507813

Filename

507813