High-frequency characteristics and its dependence on parasitic components in 0.1 /spl mu/m Si-MOSFETs

Author

Yamamoto, T. ; Tanabe, A. ; Togo, M. ; Furukawa, A. ; Mogami, T.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan

fYear

1996

fDate

11-13 June 1996

Firstpage

136

Lastpage

137

Abstract

High-frequency characteristics of 0.1 /spl mu/m Si-MOSFETs are evaluated and the influence of parasitic components on f/sub MAX/ are analyzed. It was found that reductions of both the gate resistance and junction capacitance are essential to achieve high microwave performance. By using a tungsten polycide electrode and a local channel implant technique, a f/sub T/ value of 63 GHz for NMOS and 33 GHz for PMOS were obtained with 0.12 /spl mu/m CMOS. f/sub MAX/>f/sub T/ condition was satisfied for L>0.15 /spl mu/m. When a lower resistivity gate electrode, such as titanium silicide, is adopted, f/sub MAX/>f/sub T/ can be easily obtained in 0.1 /spl mu/m CMOS. These results demonstrate that 0.1 /spl mu/m CMOS will be a good candidate for future high-performance and low-cost microwave LSIs.

Keywords

CMOS integrated circuits; MOSFET; VLSI; characteristics measurement; elemental semiconductors; field effect MMIC; integrated circuit measurement; microwave field effect transistors; silicon; 0.1 micron; 0.12 micron; 33 GHz; 63 GHz; CMOS; MOSFETs; Si; VLSI; electrode resistivity; gate resistance; high-frequency characteristics; junction capacitance; local channel implant; microwave performance; parasitic components; polycide electrode; Conductivity; Electrodes; Implants; MOS devices; Parasitic capacitance; Silicides; Titanium; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507823

Filename

507823