• DocumentCode
    2128244
  • Title

    Reverse short-channel effects and channel-engineering in deep-submicron MOSFETs: modeling and optimization

  • Author

    Bin Yu ; Nowak, E. ; Noda, K. ; Chenming Hu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    For the first time, a theoretical model is presented, taking into account all the physical effects of T/sub OX/, X/sub j/, N/sub sub/, V/sub BS/, and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The /spl Delta/V/sub th/ is found to follow the superposition principle. The worst case L/sub min/ is also modelled and its ultimate lower bound is exploited via optimum channel engineering.
  • Keywords
    MOSFET; semiconductor device models; channel engineering; deep-submicron MOSFET; model; optimization; punchthrough stopper; reverse short-channel effect; superposition principle; threshold voltage; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507833
  • Filename
    507833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2128244