• DocumentCode
    2128655
  • Title

    MP8 (contributed) 5:30 PM–5:30 PM

  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    108
  • Lastpage
    108
  • Abstract
    My PhD thesis project involves growing Deep Ultra Violet Light Emitting Diodes (D-UV LEDS) via Metalorganic Chemical Vapor Deposition (MOCVD) with a high Al content Aluminum Gallium Nitride (AlGaN) active region, using Aluminum Nitride (AlN) buffer layers on Silicon Carbide (SiC) substrates. The goal is to demonstrate a flip chip UV LED emitting with an output power of 10mW at a wavelength of 280nm. The ultimate goal is to replace UV Mercury Lamps, which are far less compact in structure, consume more energy, and utilize mercury that is toxic to humans and to the environment. However, the power output and efficiency of D-UV LEDs grown to date must be improved significantly if their potential applications for sterilization and disinfection of water sources are to be realized.
  • Keywords
    Aluminum gallium nitride; Aluminum nitride; Buffer layers; III-V semiconductor materials; Light emitting diodes; Silicon carbide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248220
  • Filename
    7248220