DocumentCode
2128655
Title
MP8 (contributed) 5:30 PM–5:30 PM
fYear
2015
fDate
13-15 July 2015
Firstpage
108
Lastpage
108
Abstract
My PhD thesis project involves growing Deep Ultra Violet Light Emitting Diodes (D-UV LEDS) via Metalorganic Chemical Vapor Deposition (MOCVD) with a high Al content Aluminum Gallium Nitride (AlGaN) active region, using Aluminum Nitride (AlN) buffer layers on Silicon Carbide (SiC) substrates. The goal is to demonstrate a flip chip UV LED emitting with an output power of 10mW at a wavelength of 280nm. The ultimate goal is to replace UV Mercury Lamps, which are far less compact in structure, consume more energy, and utilize mercury that is toxic to humans and to the environment. However, the power output and efficiency of D-UV LEDs grown to date must be improved significantly if their potential applications for sterilization and disinfection of water sources are to be realized.
Keywords
Aluminum gallium nitride; Aluminum nitride; Buffer layers; III-V semiconductor materials; Light emitting diodes; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248220
Filename
7248220
Link To Document