• DocumentCode
    2128854
  • Title

    p-Type AlN nanowires and AlN nanowire light emitting diodes on Si

  • Author

    Zhao, S. ; Connie, A.T. ; Le, B.H. ; Kong, X. ; Guo, H. ; Du, X.Z. ; Lin, J.Y. ; Jiang, H.X. ; Shih, I. ; Mi, Z.

  • Author_Institution
    Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada
  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).
  • Keywords
    Aluminum gallium nitride; Aluminum nitride; III-V semiconductor materials; Light emitting diodes; Nanowires; Silicon; Wide band gap semiconductors; Si; hopping conduction; light emitting diodes; nanowire; p-type AlN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248228
  • Filename
    7248228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2128854