Distributed Amplifier MMIC with 21 dB Gain and 90 GHz Bandwidth Using InP-Based DHBTs

Author

Schneider, K. ; Driad, R. ; Makon, R.E. ; Weimann, G.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys. (1AF), Freiburg

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical communication systems (Ethernet). Using an InP DHBT technology, exhibiting cut-off frequency values of more than 275 GHz for both f_r and f_max, the amplifier achieved a gain of 21 dB and a 90 GHz 3-dB bandwidth, resulting in a gain-bandwidth product (GBW) of 1 THz. To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.

Keywords

III-V semiconductors; MIMIC; MMIC amplifiers; bipolar MIMIC; distributed amplifiers; indium compounds; millimetre wave amplifiers; optical communication equipment; Ethernet; InP; bandwidth 90 GHz; bipolar integrated circuits; bit rate 100 Gbit/s; distributed amplifier MMIC; gain 21 dB; gain-bandwidth product; heterojunction bipolar transistors; optical communication systems; single-stage amplifiers; Bandwidth; Cutoff frequency; Distributed amplifiers; Double heterojunction bipolar transistors; Ethernet networks; Gain; Indium phosphide; MMICs; Optical amplifiers; Optical fiber communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.17

Filename

4384397