DocumentCode
2130402
Title
Reliable piezoelectric FEM-simulations of MEMS microphones: Basis for intrinsic stress reduction
Author
Reutter, T. ; Schrag, G.
Author_Institution
Inst. for Phys. of Electrotechnol., Tech. Univ. Munchen, Munich, Germany
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
193
Lastpage
196
Abstract
We derived a 3D FEM-simulation model for a piezoelectric MEMS-microphone, which includes in contrast to commonly used models intrinsic stress effects. The stress values included in the model are determined by measurements of cantilever test structures. The challenging task in the simulation is to combine a piezoelectric analysis with intrinsic stress in a harmonic response analysis, as to this, several restrictions exist in commercially available tools. The arising difficulties could be overcome by employing a coupled thermo-electro-mechanical simulation in order to get consistent static and harmonic response results. In that way, we were able to demonstrate successfully that intrinsic stress dramatically reduces the microphone sensitivity and necessarily has to be integrated in the FE-model for reliable and predictive device simulations. Additionally, the derived model is fully 3D and, thus, allows for design studies and optimization as well as for the evaluation of new design concepts since also non-axisymmetric geometries can be assembled.
Keywords
cantilevers; finite element analysis; micromechanical devices; microphones; optimisation; piezoelectric transducers; stress effects; 3D FEM-simulation model; FE-model; cantilever test structure; harmonic response analysis; intrinsic stress reduction; microphone sensitivity; optimization; piezoelectric FEM-simulation; piezoelectric MEMS-microphone; reliable device simulation; static response; thermoelectromechanical simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690498
Filename
5690498
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