SiGe T/R Modules for Ka-Band Phased Arrays

Author

Min, Byung-Wook ; Chang, Michael ; Rebeiz, Gabriel M.

Author_Institution

Univ. of Michigan, Ann Arbor

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12 mum SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5 dB gain and 2.9 dB noise figure at 34 GHz. The 42% fractional-bandwidth PA has a small-signal gain of 13 dB and a saturated output power of 19.4 dBm with 11.2% PAE from 32 to 33 GHz. The RMS phase error of the 4-bit phase shifter is less than 7.5deg from 30-38 GHz. This paper presents the individual components of the BiCMOS T/R module, and the entire T/R module performance will be measured and presented at the conference.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; MMIC power amplifiers; low noise amplifiers; millimetre wave power amplifiers; radio receivers; radio transmitters; semiconductor materials; 4-bit phase shifter; BiCMOS process; CMOS switches; HBT; Ka-band phased arrays; LNA; SiGe; T/R modules; frequency 30 GHz to 38 GHz; gain 13 dB; gain 23.5 dB; low noise amplifier; noise figure 2.9 dB; power amplifier; single-pole-double-throw switches; size 0.12 mum; transmit-receive module; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Phase noise; Phase shifters; Phased arrays; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.34

Filename

4384414