• DocumentCode
    2133380
  • Title

    PCB Ground-Parasitic Effects on a WiMAX Low-Noise Amplifier RFIC

  • Author

    Wu, J.M. ; Lo, C.W. ; Huang, B.Y. ; Yang, N.K. ; Li, S.C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
  • fYear
    2009
  • fDate
    24-26 Sept. 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents the printed circuit board (PCB) ground-parastic effects on the figure of merit of a WiMAX low noise amplifier (LNA) RFIC. The LNA RFIC is fabricated in 0.35-mum standard SiGe BiCMOS foundry process. The chip size is equal to 0.84 mm times 0.18 mm .The power consumption is 33.6 mW from the supply voltage of 3 V. The PCB ground-parasitic effects act as the source degeneration in the proposed WiMAX LNA and cause the degradation in noise figure (NF) and gain by 0.5 dB and 2.8 dB, respectively. The comparison of simulation and measurement shows good agreement.
  • Keywords
    BiCMOS integrated circuits; WiMax; low noise amplifiers; printed circuits; radiofrequency integrated circuits; BiCMOS foundry process; PCB ground-parasitic effect; WiMAX low-noise amplifier RFIC; power 33.6 mW; power consumption; printed circuit board; size 0.35 mum; voltage 3 V; BiCMOS integrated circuits; Circuit noise; Foundries; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Printed circuits; Radiofrequency integrated circuits; Silicon germanium; WiMAX;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-3692-7
  • Electronic_ISBN
    978-1-4244-3693-4
  • Type

    conf

  • DOI
    10.1109/WICOM.2009.5303276
  • Filename
    5303276