• DocumentCode
    2133424
  • Title

    A test circuit for second breakdown suitable for routine measurements

  • Author

    Khamneian, Sara ; Lauritzen, Peter

  • Author_Institution
    Department of Electrical Engineering, University of Washington Seattle WA, USA
  • fYear
    1987
  • fDate
    2-6 March 1987
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    Damage to a transistor is prevented during testing by turning on its base simultaneously with the onset of reverse biased second breakdown. Test data is similiar to that obtained with crowbar circuits. Repetitive observation is possible, but after about 10,000 test cycles, some transistors show degradation above Ic = 1A.
  • Keywords
    Degradation; Electric breakdown; NIST; Stress; Testing; Thyristors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1987 IEEE
  • Conference_Location
    San Diego, CA USA
  • ISSN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.1987.7067147
  • Filename
    7067147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2133424