High reliability 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation

Author

Yamasaki, Yasuo ; Kaida, Noriaki ; Takeuchi, Tatsuya ; Hasegawa, Taro ; Okada, Nobumasa ; Akiyama, Kan ; Chifune, Gaishi ; Onishi, Yutaka ; Uesaka, Katsumi ; Ikoma, Nobuyuki ; Fujii, Takuya ; Nakabayashi, Takashi

Author_Institution

Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

52

Lastpage

53

Abstract

Clear eye opening at 28-Gbit/s direct modulation up to 75°C is achieved with 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser. No failure had occurred at high optical output power aging test over 7000 hours.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; laser reliability; laser transitions; optical fibre communication; optical modulation; optical transmitters; quantum well lasers; AlGaInAs; bit rate 28 Gbit/s; buried heterostructure-MQW DFB laser; clear eye opening; direct modulation; laser reliability; power aging test; wavelength 1.3 mum; High speed optical techniques; Modulation; Optical fibers; Power generation; Power lasers; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348330

Filename

6348330