• DocumentCode
    2135175
  • Title

    High threshold modal gain based on highly stacked InGaAs quantum dot laser diode

  • Author

    Tanoue, F. ; Sugawara, H. ; Akahane, K. ; Yamamoto, N.

  • Author_Institution
    Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    A threshold modal gain of up to 103 cm-1 was observed for 19-stacked InGaAs quantum dot (QD) laser diodes with a high QD volume density.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; 19-stacked quantum dot laser diodes; InGaAs; high QD volume density; highly stacked quantum dot laser diode; threshold modal gain; Cavity resonators; Diode lasers; Indium gallium arsenide; Measurement by laser beam; Molecular beam epitaxial growth; Quantum dot lasers; high modal gain; high volume density; quantum dot laser;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348345
  • Filename
    6348345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2135175