Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

Author

Yanson, Dan ; Cohen, Shalom ; Levy, Moshe ; Shamay, Moshe ; Geva, Sara ; Berk, Yuri ; Tesler, Renana ; Klumel, Genadi ; Rappaport, Noam ; Karni, Yoram

Author_Institution

SCD Semicond. Devices, Haifa, Israel

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

98

Lastpage

99

Abstract

Failed high-power InGaAs/AlGaAs single emitters at 980 nm are investigated using laser-ablated windows on the substrate side. Both bulk and facet failures are analyzed with electroluminescence imaging, near and mid-IR spectroscopy, and FIB/SEM microscopy.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; focused ion beam technology; gallium arsenide; indium compounds; infrared spectra; laser ablation; optical windows; scanning electron microscopy; semiconductor lasers; FIB-SEM microscopy; InGaAs-AlGaAs; bulk failure; electroluminescence imaging; facet failure; high-power single emitters; laser-ablated windows; mid-IR spectroscopy; multispectral investigation; near IR spectroscopy; wavelength 980 nm; Laser ablation; Laser modes; Optical fibers; Optical imaging; Reliability; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348346

Filename

6348346