DocumentCode
2135208
Title
Characterization of recombination processes in quantum dot lasers using small signal modulation
Author
Zhou, K. ; Wada, O. ; Chen, S. ; Zhang, Z. ; Childs, D.T.D. ; Kennedy, K. ; Hogg, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
100
Lastpage
101
Abstract
The effect of modulation p-doping of 1.3μm quantum dot lasers is studied by spectrally resolved small-signal modulation. We describe the effect of modulation p-doping and temperature on their recombination coefficients, of importance for temperature-insensitive lasers.
Keywords
III-V semiconductors; gallium arsenide; laser transitions; optical modulation; quantum dot lasers; semiconductor doping; semiconductor quantum dots; silicon; GaAs:Si; modulation p-doping effect; quantum dot lasers; recombination coefficients; recombination processes; spectrally-resolved small-signal modulation; temperature-insensitive lasers; wavelength 1.3 mum; Charge carrier lifetime; Current density; Modulation; Quantum dot lasers; Radiative recombination; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348347
Filename
6348347
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