• DocumentCode
    2135988
  • Title

    Polariton lasing in a ZnO-based microcavity up to 353K

  • Author

    Lai, Ying-Yu ; Lan, Yu-Pin ; Huang, Si-Wei ; Lu, Tien-Chang ; Wang, Shing-Chung

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.
  • Keywords
    II-VI semiconductors; binding energy; excitons; microcavity lasers; polaritons; wide band gap semiconductors; zinc compounds; Rabi-splitting; ZnO; large-exciton binding energy; microcavity lasers; polariton lasing; temperature 353 K; Distributed Bragg reflectors; Land surface temperature; Laser excitation; Microcavities; Photonics; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348375
  • Filename
    6348375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2135988