A new static memory cell based on reverse base current (RBC) effect of bipolar transistor

Author

Sakui, K. ; Hasegawa, T. ; Fuse, T. ; Watanabe, S. ; Ohuchi, K. ; Masuoka, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

44

Lastpage

47

Abstract

A novel SRAM (static random access memory) cell, which consists of a bipolar transistor and an MOS transistor, is proposed. The device, which is based on the reverse base current (RBC) effect, has been fabricated by conventional BiCMOS technology, using double poly-Si. A cell size of 8.58 mu m/sup 2/ has been realized in a 1.0- mu m ground rule. The results indicate that the RBC cell can be applied to very-high-density SRAMs, as large as 16 Mb or beyond.<>

Keywords

BIMOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; random-access storage; 1 micron; 16 Mbit; MOS transistor; RBC cell; ULSI; bipolar transistor; cell size; conventional BiCMOS technology; double poly-Si; polycrystalline Si; reverse base current effect; static memory cell; static random access memory; very-high-density SRAMs; Bipolar transistors; Breakdown voltage; Character generation; Circuit simulation; Electron emission; Fuses; Impact ionization; Leakage current; Random access memory; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32746

Filename

32746