DocumentCode
2137713
Title
A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design
Author
Yoshinaga, H. ; Kashiwabara, Y. ; Abe, B. ; Shibata, K.
Author_Institution
Komukai Works, Toshiba Corp., Kawasaki, Japan
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
25
Abstract
An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and greater than 32 dB gain has been successfully developed.
Keywords
HEMT integrated circuits; MMIC amplifiers; electric noise measurement; field effect MMIC; high electron mobility transistors; millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device noise; tuning; 1.6 dB; 32 dB; K-band; MMIC LNA design; W-band; millimeter-wave low-noise HEMTs; noise parameters; on-wafer tuning; pseudomorphic HEMTs; Circuit noise; Equivalent circuits; Frequency; HEMTs; MODFETs; Millimeter wave technology; Noise figure; Noise measurement; Q measurement; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508455
Filename
508455
Link To Document