Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output

Author

Lester, J.A. ; Hwang, Y. ; Chi, J. ; Lai, R. ; Biedenbender, M. ; Chow, P.D.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

153

Abstract

Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and frequency. The compact amplifier (3.6 mm by 1.6 mm) features the use of thinned 2-mil GaAs substrate and off-chip output matching and combining on a 5-mil alumina substrate.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; impedance matching; millimetre wave amplifiers; power amplifiers; power combiners; 1.6 mm; 2 mil; 3.6 mm; 34 percent; 45.5 GHz; 5 mil; Al/sub 2/O/sub 3/; EHF; GaAs; MIMIC; MM-wave IC; MMIC power amplifier; PHEMT; alumina substrate; compact Q-band amplifier; high efficiency design; offchip combining; offchip output matching; partially-matched output; pseudomorphic HEMT; thinned GaAs substrate; HEMTs; High power amplifiers; Impedance matching; MMICs; PHEMTs; Parasitic capacitance; Phased arrays; Power amplifiers; Radiofrequency amplifiers; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508484

Filename

508484