A new concept silicon homojunction infrared sensor

Author

Tohyama, S. ; Teranishi, N. ; Konuma, K. ; Nishimura, M. ; Arai, K. ; Oda, E.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

82

Lastpage

85

Abstract

A novel silicon photovoltaic infrared sensor is proposed. It consists of three regions with a homojunction structure that has a flexibility designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infrared absorption and internal photoemission by free-electrons in a conduction band in a degenerated n/sup ++/-type silicon. Results obtained with fabricated sensors have verified the basic operating principle and have shown that the detectable wavelength range extends past 12 mu m.<>

Keywords

elemental semiconductors; image sensors; infrared detectors; infrared imaging; silicon; 1.5 to 12 micron; 77 K; Si infrared sensors; barrier height tuned cutoff wavelength; conduction band; cutoff wavelength; degenerated n/sup ++/-type silicon; degerate n/sup ++/ type Si; detectable wavelength range; flexibility designed barrier height; free-electrons; homojunction infrared sensor; homojunction structure; infrared absorption; internal photoemission; operation; operational temperature; photovoltaic infrared sensor; semiconductors; Boron; Electron emission; Hot carriers; Infrared detectors; Infrared sensors; Laboratories; Microelectronics; National electric code; Photonic band gap; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32756

Filename

32756