• DocumentCode
    2140383
  • Title

    Linearised 2 GHz amplifier for IMT-2000

  • Author

    Yu, Chi Sun ; Chan, Wing Shing ; Chan, Wing-Le

  • Author_Institution
    Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, China
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    245
  • Abstract
    Under large signal conditions, amplifiers using GaAs FETs have high input non-linearity due to the non-linear gate-to-source capacitance Cgs which will result in AM-PM distortion. The method presented uses a parallel connected varactor diode to linearise a GaAs FET amplifier. A reduction of 10 dB in spectral regrowth at 2 GHz is achieved with a low loss. This method is suitable for circuit miniaturisation and can be applied to amplifiers for IMT-2000
  • Keywords
    UHF amplifiers; field effect transistor circuits; land mobile radio; varactors; 2 GHz; AM-PM distortion; FET; FET amplifier; GaAs; III V semiconductor; IMT-2000; UHF; circuit miniaturisation; high input nonlinearity; large signal conditions; linearised amplifier; mobile radio; nonlinear gate-to-source capacitance; parallel connected varactor diode; spectral regrowth method; Capacitance; Circuits; Diodes; FETs; Gallium arsenide; Modulation; Nonlinear distortion; Quadrature phase shift keying; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vehicular Technology Conference Proceedings, 2000. VTC 2000-Spring Tokyo. 2000 IEEE 51st
  • Conference_Location
    Tokyo
  • ISSN
    1090-3038
  • Print_ISBN
    0-7803-5718-3
  • Type

    conf

  • DOI
    10.1109/VETECS.2000.851455
  • Filename
    851455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2140383