High density vertical interconnects for 3-D integration of silicon integrated circuits

Author

Bower, C.A. ; Malta, D. ; Temple, D. ; Robinson, J.E. ; Coffinan, P.R. ; Skokan, M.R. ; Welch, T.B.

Author_Institution

RTI Int., Research Triangle Park, NC

fYear

0

fDate

0-0 0

Abstract

This paper describes a technology platform being developed for three-dimensional (3-D) integration of thin stacked silicon integrated circuits (ICs). 3-D integration technology promises to dramatically enhance on-chip signal processing capabilities of a variety of sensor and actuator array devices hybridized with silicon read-out electronics. Currently, advanced 3-D integrated infrared focal plane array detectors are being developed within the DARPA vertically integrated sensor arrays (VISA) program. Here, we describe the 3-D integration process flow and demonstrations developed in the VISA program

Keywords

elemental semiconductors; integrated circuit interconnections; monolithic integrated circuits; silicon; 3D integration; DARPA; VISA program; actuator array devices; high density vertical interconnects; infrared focal plane array detectors; on-chip signal processing; read-out electronics; sensor array devices; silicon integrated circuits; vertically integrated sensor arrays; Actuators; Array signal processing; Hybrid integrated circuits; Infrared detectors; Infrared sensors; Integrated circuit interconnections; Integrated circuit technology; Sensor arrays; Sensor phenomena and characterization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2006. Proceedings. 56th

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

1-4244-0152-6

Type

conf

DOI

10.1109/ECTC.2006.1645677

Filename

1645677