Electromigration of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps bonded on substrate pads of Au/Ni/Cu or Cu metallization

Author

Lai, Yi-Shao ; Lee, Chiu-Wen ; Chiu, Ying-Ta ; Shao, Yu-Hsiu

Author_Institution

Stress-Reliability Lab., Adv. Semicond. Eng., Inc., Kaohsiung

fYear

0

fDate

0-0 0

Abstract

Designed experiments are conducted in this paper to study the effect of Au/Ni/Cu or Cu substrate pad metallization on the electromigration reliability of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Electromigration patterns are investigated in solder bumps under a current stressing condition with an average current density of about 5 kA/cm² at an ambient temperature at 150 degC. Experiments show that test vehicles with Cu metallization exhibit better electromigration reliability compared to those with Au/Ni/Cu metallization. Corresponding failure mechanisms are proposed based on the observations of microstructures inside current stressed solder bumps

Keywords

copper alloys; current density; electromigration; flip-chip devices; gold alloys; integrated circuit metallisation; integrated circuit reliability; nickel alloys; silver alloys; solders; tin alloys; titanium alloys; 150 C; Au/Ni/Cu metallization; AuNiCu; Cu metallization; SnAgCu; TiNiCu; current density; current stressing condition; electromigration reliability; failure mechanisms; flip-chip solder bumps; under bump metallurgy; Bonding; Current density; Electromigration; Failure analysis; Gold; Metallization; Microstructure; Temperature; Testing; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2006. Proceedings. 56th

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

1-4244-0152-6

Type

conf

DOI

10.1109/ECTC.2006.1645717

Filename

1645717