Modeling of the turn-on characteristics of poly-silicon thin-film transistors with considering kink effect

Author

Li, Bin ; Chen, Ting ; Zheng, Xue-Ren

Author_Institution

Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

317

Lastpage

320

Abstract

A semi-empirical analytical model of the turn-on characteristics of poly-silicon thin-film transistor (TFT) with considering kink effect is presented based on the physical characteristics of poly-silicon thin film. With reference to the approach of modeling the kink effect in SOI devices and considering the grain boundaries in poly-silicon thin film, the dc characteristics of poly-silicon TFT are simulated, including drain induced grain boundary lowering (DIGBL) effect, impact ionization, floating body effect, parasitic bipolar transistor (PBT) effect, etc. The simulation results show a good agreement with the experimental data.

Keywords

ionisation; silicon-on-insulator; thin film transistors; SOI devices; drain induced grain boundary lowering effect; floating body effect; impact ionization; kink effect; parasitic bipolar transistor effect; poly-silicon thin-film transistors; silicon-on-insulator; turn-on characteristic modeling; Analytical models; Bipolar transistors; Body regions; Circuit simulation; Electrons; Grain boundaries; Impact ionization; MOSFET circuits; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734527

Filename

4734527