Simulation of time-dependent transport in nanoscaled devices

Author

Chen, Zhidong ; Zhang, Jinyu ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

373

Lastpage

376

Abstract

A method for simulating time-dependent transport in nanoscaled devices is presented. The method is based on solving time-dependent Schrodinger equation using the method of finite difference time domain (FDTD). Poisson equation is solved self-consistently with Schrodinger equation. This method is demonstrated by simulations of time-dependent transport in a nanowire and gate-around carbon nanotube field-effect transistor (CNTFET). Transient effects, e.g., finite rising time, are explored in these devices.

Keywords

Poisson equation; Schrodinger equation; field effect transistors; finite element analysis; nanoelectronics; nanotube devices; nanowires; semiconductor device models; transport processes; CNTFET; FDTD; Poisson equation; Schrodinger equation; finite difference time domain; gate-around carbon nanotube field-effect transistor; nanoscaled devices; nanowire; time-dependent transport; transient effects; Ballistic transport; CNTFETs; Current density; Finite difference methods; Nanoscale devices; Poisson equations; Schrodinger equation; Time domain analysis; Voltage; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734557

Filename

4734557