• DocumentCode
    2144527
  • Title

    Verilog-A model for phase change memory simulation

  • Author

    Kwong, K.C. ; Li, Lin ; He, Jin ; Chan, Mansun

  • Author_Institution
    Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    492
  • Lastpage
    495
  • Abstract
    A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated by comparing with experimental data reported in the literature.
  • Keywords
    circuit simulation; hardware description languages; phase change memories; temperature sensors; PCM cell; Verilog-A platform; circuit simulation; fully-customized phase change memory model; temperature sensing circuit; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Hardware design languages; Phase change materials; Phase change memory; Switches; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734588
  • Filename
    4734588