DocumentCode
2144527
Title
Verilog-A model for phase change memory simulation
Author
Kwong, K.C. ; Li, Lin ; He, Jin ; Chan, Mansun
Author_Institution
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
492
Lastpage
495
Abstract
A fully-customized phase change memory (PCM) model for circuit simulation has been developed and implemented in Verilog-A platform. A temperature sensing circuit is used to track the set and reset conditions of the PCM element. The current-voltage of PCM cell at the two different states and the change of states during set and reset can be correctly simulated by the model. The model has also been calibrated by comparing with experimental data reported in the literature.
Keywords
circuit simulation; hardware description languages; phase change memories; temperature sensors; PCM cell; Verilog-A platform; circuit simulation; fully-customized phase change memory model; temperature sensing circuit; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Hardware design languages; Phase change materials; Phase change memory; Switches; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734588
Filename
4734588
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