High temperature synthesis of In-doped ZnO nano-structures on InP (001) substrate by pulsed laser deposition

ZnO nanostructures were grown on InP (001) substrate to achieve the In-doped ZnO nanostructure by pulsed laser deposition technique at high temperature. The FE-SEM images showed that the nanostructures grown at different temperatures have distinct dissimilar structures, and the morphology became better with increasing substrate temperature. The results of XRD showed that In element from InP substrates diffused into the ZnO layer to form In-doped ZnO nanostructures at the high temperature above 500°C. Energy dispersive chemical analysis (EDAX) is taken to ascertain the component of the nanostructure grown.