Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices

Author

Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

703

Lastpage

706

Abstract

Anti-ferromagnetic BiFeO₃/Bi_3.15Nd_0.85Ti₃O₁₂ (BFO/BNdT) multilayer films with remnant polarization of 22.1 Â¿C/cm² have been fabricated by sol-gel method on Pt (100)/Ti/SiO₂/Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 10⁵ Hz, respectively. The multilayer film exhibits little polarization fatigue(<5%) upon 10¹⁰ switching cycles. The enhanced ferroelectric properties are mostly ascribed to the coupling reaction between the BFO and BNdT thin films, and the BNdT layer induces the crystallization of BFO thin film.

Keywords

X-ray diffraction; antiferromagnetic materials; bismuth compounds; crystallisation; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; magnetic thin films; multiferroics; multilayers; neodymium compounds; permittivity; sol-gel processing; thin film capacitors; (110) orientation; (111) orientation; BiFeO₃-Bi_3.15Nd_0.85Ti₃O₁₂; Pt-Ti-SiO₂-Si; X-ray diffraction analysis; antiferromagnetic multilayer films; dielectric constant; dissipation factor; ferroelectric switching; frequency 100000 Hz; multilayer capacitors; polarization fatigue; remnant polarization; sol-gel method; temperature 293 K to 298 K; thin film crystallization; Antiferromagnetic materials; Bismuth; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Neodymium; Nonhomogeneous media; Polarization; Semiconductor films; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734628

Filename

4734628