DocumentCode
2146100
Title
2 GHz MeiÃ\x9fner VCO in Si Bipolar Technology
Author
Wohlmuth, H.D. ; Simbürger, W. ; Knapp, H. ; Scholtz, A.L.
Author_Institution
INFINEON Technologies AG, Corporate Research, D-81739 Munich, Otto-Hahn-Ring 6, Germany; Institut fÿr Nachrichten- u. Hochfrequenztechnik, A-1040 Vienna, GuÃ\x9fhausstr. 25/389. Tel.: +49 89 636-48490, E-Mail: hans-dieter. wohlmuth@infineon.com
Volume
1
fYear
1999
fDate
Oct. 1999
Firstpage
190
Lastpage
193
Abstract
A completely integrated 2 0Hz Meißner VCO in silicon bipolar for wireless communications is presented. The chip is implemented in a 25GHz fT, 0.8¿m, 3-layer-interconnect silicon bipolar production technology B6HF. The Meißner type oscillator circuit uses on-chip multiple coupled inductors and achieves a phase noise of -102dBc/Hz at an offset of l00kHz. The VCO is designed for 3V to 5V battery operation and delivers ¿8.7 dBm of output power. The VCO meets the specifications for DECT cordless telephone sets.
Keywords
Batteries; Coupling circuits; Inductors; Integrated circuit technology; Phase noise; Power generation; Production; Silicon; Voltage-controlled oscillators; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338305
Filename
4139400
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