DocumentCode
2146210
Title
Surfaces and interfaces for controlled defect engineering
Author
Seebauer, Edmund G.
Author_Institution
Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
773
Lastpage
776
Abstract
The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
Keywords
elemental semiconductors; integrated circuit technology; semiconductor doping; semiconductor junctions; silicon; controlled defect engineering; dopant activation; integrated circuits; point defects; transient enhanced diffusion; ultrashallow junction applications; Annealing; Atomic measurements; Bonding; Boron; Chemical engineering; Lattices; Silicon; Surface cleaning; Surface impedance; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734658
Filename
4734658
Link To Document