• DocumentCode
    2146522
  • Title

    FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor

  • Author

    Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    850
  • Lastpage
    852
  • Abstract
    A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, easier scaling, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications.
  • Keywords
    DRAM chips; ferroelectric devices; field effect memory circuits; field effect transistor circuits; DRAM cell size; FEDRAM; capacitor-less DRAM; ferroelectric-gate memory transistor structure; ferroelectric-gated field-effect transistor; Capacitors; Dielectrics; Energy consumption; FETs; Ferroelectric films; Ferroelectric materials; Hysteresis; MOSFETs; Polarization; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734674
  • Filename
    4734674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146522