P and B single- and co-doped silicon nanocrystals: formation and activation energies, electronic and optical properties

Author

Ossicini, Stefano ; Iori, Federico ; Degoli, Elena ; Luppi, Eleonora ; Margi, R. ; Cantele, G. ; Trani, F. ; Ninno, D.

Author_Institution

INFM, Reggio Emilia, Italy

fYear

2005

fDate

21-23 Sept. 2005

Firstpage

60

Lastpage

62

Abstract

We report on an ab initio study of the structural and electronic properties of B and P doped Si nanocrystals (Si-nc). The formation energies (FE) scale with the radius, the activation energies with the inverse radius. The effects of B and P co-doping show that the FE are always smaller than that for the corresponding single-doped cases and that is possible to engineer the photoluminescence properties of Si-nc.

Keywords

ab initio calculations; boron; elemental semiconductors; nanostructured materials; optical materials; phosphorus; photoluminescence; semiconductor doping; silicon; B single-doped nanocrystals; P single-doped nanocrystals; Si:B; Si:P; Si:P,B; ab initio study; activation energies; codoped silicon nanocrystals; codoping; electronic properties; formation energies; nanocrystal formation; optical properties; photoluminescence; structural properties; Iron; Nanocrystals; Nanoscale devices; Optoelectronic devices; Photoluminescence; Potential well; Semiconductor impurities; Semiconductor lasers; Silicon; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2005. 2nd IEEE International Conference on

Print_ISBN

0-7803-9070-9

Type

conf

DOI

10.1109/GROUP4.2005.1516403

Filename

1516403