DocumentCode
2146892
Title
UTBB FD-SOI: A process/design symbiosis for breakthrough energy-efficiency
Author
Magarshack, Philippe ; Flatresse, Philippe ; Cesana, Giorgio
Author_Institution
STMicroelectronics, Technology R&D, Crolles, France
fYear
2013
fDate
18-22 March 2013
Firstpage
952
Lastpage
957
Abstract
UTBB FD-SOI technology has become mainstream within STMicroelectronics, with the objective to serve a wide spectrum of mobile multimedia products. This breakthrough technology brings a significant improvement in terms of performance and power saving, complemented by an excellent responsiveness to power management design techniques for energy efficiency optimization. The symbiosis between process and design is key in this achievement enabling to provide already at 28nm node a real differentiation in terms of flexibility, cost and energy efficiency with respect to any process available on the market.
Keywords
CMOS integrated circuits; Electrostatics; Energy efficiency; Logic gates; Silicon; System-on-chip; Transistors; Back-Bias; CMOS; SoC; UTBB FD-SOI; energy efficiency; high-performance; low-power; mobile application;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013
Conference_Location
Grenoble, France
ISSN
1530-1591
Print_ISBN
978-1-4673-5071-6
Type
conf
DOI
10.7873/DATE.2013.200
Filename
6513646
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