• DocumentCode
    2147425
  • Title

    Multi-color emission wavelength switching in a strained Si1-xGex/Si quantum well

  • Author

    Yasuhara, N. ; Fukatsu, S.

  • Author_Institution
    Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    Three-color voltage-controlled emission wavelength switching (VCEWS) is demonstrated in a strained Si1-x Gex/Si triple quantum well, paving a way toward a Si-based, monolithic multi-color-selectable light emitting diode.
  • Keywords
    Ge-Si alloys; electro-optical switches; elemental semiconductors; light emitting diodes; optical tuning; photoluminescence; semiconductor quantum wells; silicon; Si-based monolithic multicolor-selectable light emitting diode; Si1-xGex-Si; strained Si1-x Gex/Si triple quantum well; voltage-controlled emission wavelength switching; Art; Charge carrier density; Charge carrier processes; Electroluminescence; Electron emission; Light emitting diodes; Photoluminescence; Proportional control; Switches; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516437
  • Filename
    1516437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147425