Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Author

Agboton, Alain ; Defrance, Nicolas ; Altuntas, Philippe ; Avramovic, Vanessa ; Cutivet, Adrien ; Ouhachi, R. ; De Jaeger, J.C. ; Bouzid-Driad, S. ; Maher, Hassan ; Renvoise, M. ; Frijlink, P.

Author_Institution

IEMN (Intitut d´Electron., de Microelectron. et de Nanotechnol.), Villeneuve-d´Ascq, France

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

57

Lastpage

60

Abstract

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the obtained transit delay contributions, the effective electron velocity is estimated to 0.85×10⁷ cm.s^-1. In addition, the effect of the image charge on the drain delay is experimentally demonstrated through the extraction of the mirroring coefficient a close to the predicted simulation value.

Keywords

II-VI semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; passivation; silicon; wide band gap semiconductors; AlGaN-GaN; HEMT; S parameters; SiN; delay time analysis; effective electron velocity; electron delay analysis; high electron mobility transistors; image charge effect; silicon substrate; size 90 nm; Aluminum gallium nitride; Delays; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818818

Filename

6818818