Hydrogen purging during growth interruptions and its effect on electron transport in InP/InGaAs/InP HFETS grown by LP-MOVPE

Author

Kohl, A. ; Mesquida Kusters, A. ; Brittner, S. ; Heime, K. ; Finders, J. ; Gnoth, D. ; Geurts, J. ; Woitok, J.

Author_Institution

Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

151

Lastpage

154

Abstract

InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface with respect to electron transport was achieved by growth interruptions without group-V stabilization of the surface before growth of the subsequent layer is started

Keywords

III-V semiconductors; carrier mobility; field effect transistors; gallium arsenide; indium compounds; semiconductor growth; surface scattering; vapour phase epitaxial growth; H; H purging; InGaAs; InP; InP-InGaAs; InP/InGaAs/InP HFET; LP-MOVPE; electron transport; group-V stabilization; growth interruptions; growth parameters; heterointerface; heterojunction field effect transistors; low pressure metalorganic vapour phase epitaxy; reactive gases; subsequent layer; surface; switching sequence; Electrons; Gases; HEMTs; Hydrogen; Indium compounds; Indium gallium arsenide; Indium phosphide; Inductors; MODFETs; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328184

Filename

328184