Photoluminescence and electrical characterization of shallow Mg, Mg/Ar and Mg/P implants into InP:Fe

Mg, Mg/P, and Mg/Ar implants were performed at 80 keV into InP:Fe with the aim of obtaining shallow p⁺ layers. After rapid thermal annealing, activations between 10% and 50% and mobilities as high as 110 cm²/Vs were obtained for the different doses employed. For the implants with dose of 10¹⁴ cm^-2 differential Hall measurements showed hole profiles with peak concentrations in the mid-10¹⁸ cm^-3 range, Hall mobilities of 90 cm²/Vs and depths lower than 3000 Å. After co-implantation with P or Ar, a reduction in the in-diffusion of Mg was obtained as well as a slight increase in activation. Photoluminescence measurements demonstrated the good crystalline quality of the material after annealing. Together with narrow emissions near the gap wavelength, two broad bands were seen centered at 1.3 and 0.87 eV, whose origins are discussed. The high hole concentrations and mobilities of the p-type layers obtained make them suitable for device applications